A method is disclosed for forming copper damascene interconnects without the attendant CMP (chemical-mechanical polishing) dishing problem that is encountered in the art. This is accomplished by first lining the inside walls of a dual damascene structure with a diffusion barrier layer, and then depositing...http://www.google.de/patents/US6051496?utm_source=gb-gplus-sharePatent US6051496 - Use of stop layer for chemical mechanical polishing of CU damascene
