A method is described for selectively treating the properties of a gate dielectric near corners of the gate without altering the gate dielectric in a center region of a gate channel. The method includes providing a structure having a gate opening and depositing a layer of dielectric with a high dielectric...http://www.google.de/patents/US7078750?utm_source=gb-gplus-sharePatent US7078750 - Method of fabricating a robust gate dielectric using a replacement gate flow
