A flash memory cell with an embedded gate structure capable of storing two bits of information and the operation of such a flash memory cell are provided. A first ion-doped region, serving as a source terminal, is formed in a semiconductor substrate. An embedded gate structure and a second ion-doped...http://www.google.de/patents/US6490196?utm_source=gb-gplus-sharePatent US6490196 - Method for operating a nonvolatile memory having embedded word lines
