An electrically erasable, programmable memory cell array of the floating gate type is made by a process which allows an erase window for the first level polysilicon floating gate to be positioned beneath a third level poly erase line, while maintaining a small cell size. The erase window is not beneath...http://www.google.de/patents/US4561004?utm_source=gb-gplus-sharePatent US4561004 - High density, electrically erasable, floating gate memory cell
