The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion of a dielectric material. After the nitrogen-comprising layer is formed, at least some of the substrate...http://www.google.de/patents/US6562684?utm_source=gb-gplus-sharePatent US6562684 - Methods of forming dielectric materials
