There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode...http://www.google.de/patents/US5627090?utm_source=gb-gplus-sharePatent US5627090 - Semiconductor element and process for production for the same
