A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer...http://www.google.de/patents/US6620670?utm_source=gb-gplus-sharePatent US6620670 - Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
