A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer,...http://www.google.de/patents/US7868314?utm_source=gb-gplus-sharePatent US7868314 - Phase change memory device and fabricating method therefor
