EEPROM memory devices and arrays are described that facilitate the use of vertical floating gate memory cells and select gates in NOR or NAND high density memory architectures. Memory embodiments of the present invention utilize vertical select gates and floating gate memory cells to form NOR and NAND...http://www.google.de/patents/US7157771?utm_source=gb-gplus-sharePatent US7157771 - Vertical device 4F2 EEPROM memory
