A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to...http://www.google.de/patents/US5287082?utm_source=gb-gplus-sharePatent US5287082 - Submicron isolated, released resistor structure
