Embodiments of the present invention generally provide a method for forming a dielectric material with reduced bonding defects on a substrate. In one embodiment, the method comprises forming a dielectric layer having a desired thickness on a surface of a substrate, exposing the substrate to a low energy...http://www.google.de/patents/US20080076268?utm_source=gb-gplus-sharePatent US20080076268 - FLUORINE PLASMA TREATMENT OF HIGH-K GATE STACK FOR DEFECT PASSIVATION
