A method for manufacturing a memory device uses a damascene process to define memory elements. The device comprises a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness...http://www.google.de/patents/US20070138458?utm_source=gb-gplus-sharePatent US20070138458 - Damascene Phase Change RAM and Manufacturing Method
