A method for fabricating a flux concentrating system (62) for use in a magnetoelectronics device is provided. The method comprises the steps of providing a bit line (10) formed in a substrate (12) and forming a first material layer (24) overlying the bit line (10) and the substrate (12). Etching is performed...http://www.google.de/patents/US7279341?utm_source=gb-gplus-sharePatent US7279341 - Method for fabricating a flux concentrating system for use in a magnetoelectronics device
