A method to form contacts in an integrated circuit device comprising to eliminate shorting between adjacent contacts due to dielectric layer voids is achieved. A substrate is provided. Narrowly spaced conductive lines are provided on the substrate. A dielectric layer is deposited overlying the conductive...http://www.google.de/patents/US6365464?utm_source=gb-gplus-sharePatent US6365464 - Method to eliminate shorts between adjacent contacts due to interlevel dielectric voids
