A magnetic memory device having a TMR element with high performance and high reliability, which can prevent oxidation or reduction of a tunnel dielectric layer in the TMR element. A nonvolatile magnetic memory device (1) includes a TMR element (13) configured by sandwiching a tunnel dielectric layer...http://www.google.de/patents/US6998665?utm_source=gb-gplus-sharePatent US6998665 - Magnetic memory device and manufacturing method therefor
