A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to...http://www.google.de/patents/US7317227?utm_source=gb-gplus-sharePatent US7317227 - Method for forming pattern of stacked film
