A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking...http://www.google.de/patents/US8009714?utm_source=gb-gplus-sharePatent US8009714 - Laser diode and semiconductor light-emitting device producing visible-wavelength radiation
