A process for creating a MOSFET device, with a narrow polycide gate structure, on an ultra-thin gate oxide, has been developed. The process features partially etching of a polysilicon layer, used in the polycide structure, to a level in which only a thin residual layer of the polysilicon remains. After...http://www.google.de/patents/US5856227?utm_source=gb-gplus-sharePatent US5856227 - Method of fabricating a narrow polycide gate structure on an ultra-thin gate insulator layer
