Nonvolatile memory elements are disclosed which can have increased capacity, reduced operating voltage and/or faster operating speeds. According to one embodiment, a nonvolatile memory element can include a first diffusion layer (2) and a second diffusion layer (3) formed in a main surface of a substrate...http://www.google.de/patents/US6888194?utm_source=gb-gplus-sharePatent US6888194 - Nonvolatile semiconductor memory device, manufacturing method thereof, and operating method thereof
