Single-ended sensing devices for sensing a programmed state of a non-volatile memory cell are adapted for use in low-voltage memory devices. Methods of their operation include precharging an input node of a single-ended sensing device to a precharge potential while the input node is coupled to a source/drain...http://www.google.de/patents/US7403423?utm_source=gb-gplus-sharePatent US7403423 - Sensing scheme for low-voltage flash memory
