A high performance semiconductor device structure and method of making the same include a bulk semiconductor substrate and an upper level silicon substrate. The upper level silicon substrate includes a low-K dielectric layer and a silicon substrate layer. The low-K dielectric layer is formed on the bulk...http://www.google.de/patents/US6140163?utm_source=gb-gplus-sharePatent US6140163 - Method and apparatus for upper level substrate isolation integrated with bulk silicon
