The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal dielectric (PMD) level, in IC applications and provides a dielectric layer deposited in situ with the SiC material...http://www.google.de/patents/US7470611?utm_source=gb-gplus-sharePatent US7470611 - In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
