The active region of an NMOS transistor and the active region of a PMOS transistor are divided by an STI element isolation structure. The STI element isolation structure is made up of a first element isolation structure formed so as to include the interval between both active regions, and a second element...http://www.google.de/patents/US20060220142?utm_source=gb-gplus-sharePatent US20060220142 - Semiconductor device and manufacturing method thereof
