A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor has a semiconductor layer which includes first and second regions formed continuously. The TFT has the first...http://www.google.de/patents/US20010009283?utm_source=gb-gplus-sharePatent US20010009283 - Semiconductor device and method of manufacturing the semiconductor device
