An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film...http://www.google.de/patents/US6071766?utm_source=gb-gplus-sharePatent US6071766 - Method for fabricating semiconductor thin film
