Silicon-on-insulator (SOI) islands are formed in a silicon substrate. A first set of trenches is formed in the silicon substrate, leaving laterally-isolated rows of silicon between the trenches. The first set of trenches is then filled with silicon oxide. A second set of trenches is then formed in the...http://www.google.de/patents/US6319333?utm_source=gb-gplus-sharePatent US6319333 - Silicon-on-insulator islands
