Provided is a constitution for forming a polysilicon film having uniform crystallinity. To construct a structure of a bottom-gate-type TFT, a heat relaxation layer is formed to cover a gate electrode. The heat conductivity of the heat relaxation layer is lower than that of the gate electrode, and it...http://www.google.de/patents/US6605496?utm_source=gb-gplus-sharePatent US6605496 - Method of fabricating a bottom-gate-type thin film transistor using a heat relaxation layer during laser crystallization
