A strained Fin Field Effect Transistor (FinFET) (and method for forming the same) includes a relaxed first material having a sidewall, and a strained second material formed on the sidewall of the first material. The relaxed first material and the strained second material form a fin of the FinFET. ...http://www.google.de/patents/US20050145941?utm_source=gb-gplus-sharePatent US20050145941 - High performance strained silicon FinFETs device and method for forming same
