Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having...http://www.google.de/patents/US6903960?utm_source=gb-gplus-sharePatent US6903960 - Junction-isolated depletion mode ferroelectric memory devices
