A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges...http://www.google.de/patents/US20070096224?utm_source=gb-gplus-sharePatent US20070096224 - Semiconductor device and a method for manufacturing the same
