The present invention comprises a method for controlling a threshold voltage through a semiconductor substrate of a first conductivity type (the type being an n- or p- type in a MOSFET) without the need for a blanket implant for either long or short channel devices. A gate structure having opposed lateral...http://www.google.de/patents/US5874329?utm_source=gb-gplus-sharePatent US5874329 - Method for artificially-inducing reverse short-channel effects in deep sub-micron CMOS devices
