There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral...http://www.google.de/patents/US7479657?utm_source=gb-gplus-sharePatent US7479657 - Semiconductor device including active matrix circuit
