A structure and method for a silicon carbide (SiC) gate turn-off (GTO) thyristor device operable to provide an increased turn-off gain comprises a cathode region, a drift region having an upper portion and a lower portion, wherein the drift region overlies the cathode region, a gate region overlying...http://www.google.de/patents/US6900477?utm_source=gb-gplus-sharePatent US6900477 - Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture
