In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure...http://www.google.de/patents/US7727911?utm_source=gb-gplus-sharePatent US7727911 - Method for forming a gate insulating film
