A sacrifice oxide film is formed in a Fin semiconductor substrate portion, and impurities are then implanted in the semiconductor substrate through a mask pattern as a mask. Thereafter, the sacrifice oxide film is removed to expose the semiconductor substrate. A gate insulating film is then formed on...http://www.google.de/patents/US7833867?utm_source=gb-gplus-sharePatent US7833867 - Semiconductor device and method for manufacturing the same
