A magnetic random access memory (MRAM) using a Schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line...http://www.google.de/patents/US6750540?utm_source=gb-gplus-sharePatent US6750540 - Magnetic random access memory using schottky diode
