A semiconductor device includes a Si substrate, a gate insulating film formed on the Si substrate, the gate insulating film being formed of an oxide film containing at least one selected from the group of Zr, Hf, Ti and a lanthanoid series metal, and having a single local minimal value on a high binding...http://www.google.de/patents/US20060086993?utm_source=gb-gplus-sharePatent US20060086993 - Semiconductor device and manufacturing method thereof
