An improved method for manufacturing an insulated gate field effect transistor is provided. As a first step, a silicon oxide film is grown on a silicon substrate, and a first silicon nitride film is deposited thereon. The first silicon nitrite film, the silicon oxide film and the silicon substrate are...http://www.google.de/patents/US5346834?utm_source=gb-gplus-sharePatent US5346834 - Method for manufacturing a semiconductor device and a semiconductor memory device
