A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed...http://www.google.de/patents/US7122450?utm_source=gb-gplus-sharePatent US7122450 - Process for manufacturing a semiconductor device
