A polysilicon-based floating gate is formed so as to be resistant to oxidation that occurs during multiple thermo-cycles in fabrication. Accordingly, edge erase times in NOR-type memory devices may be minimized. Additionally, manufacture of oxidation resistant floating gates reduces variations in edge...http://www.google.de/patents/US6114230?utm_source=gb-gplus-sharePatent US6114230 - Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates
