A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pressure of about 1 to about 100 mTorr,...http://www.google.de/patents/US20060178018?utm_source=gb-gplus-sharePatent US20060178018 - Silicon oxynitride gate dielectric formation using multiple annealing steps
