There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and...http://www.google.de/patents/US7935584?utm_source=gb-gplus-sharePatent US7935584 - Method for manufacturing crystalline semiconductor device
