The semiconductor device includes and the method for fabricating the same forms a damaged region under a gate electrode to improve device performance and simplify the process. The semiconductor device includes a substrate in which a buried insulating layer is formed; device isolating layers buried in...http://www.google.de/patents/US6210998?utm_source=gb-gplus-sharePatent US6210998 - Semiconductor device formed on an insulator and having a damaged portion at the interface between the insulator and the active layer
