A method of forming a self-aligned dual damascene structure in a semiconductor device arrangement forms a first low k dielectric material over an underlying metal interconnect layer, such as a copper interconnect layer. An oxide etch stop layer is formed on the first low k dielectric layer, and a second...http://www.google.de/patents/US6207576?utm_source=gb-gplus-sharePatent US6207576 - Self-aligned dual damascene arrangement for metal interconnection with low k dielectric constant materials and oxide etch stop layer
