A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system experience similar nitrogen content....http://www.google.de/patents/US7122454?utm_source=gb-gplus-sharePatent US7122454 - Method for improving nitrogen profile in plasma nitrided gate dielectric layers
