The degradation of the low current gain, which is exhibited during emitter-base reverse bias breakdown testing, is prevented by providing an emitter-base resistive shunt on the surface. This resistive shunt, preferably made of silicon nitride. utilizes surface recombination to reduce the low current...http://www.google.de/patents/US4905070?utm_source=gb-gplus-sharePatent US4905070 - Semiconductor device exhibiting no degradation of low current gain
