Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench-based...http://www.google.de/patents/US6388286?utm_source=gb-gplus-sharePatent US6388286 - Power semiconductor devices having trench-based gate electrodes and field plates
