A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided, a catalyst nanoparticle is deposited on the substrate, a gaseous precursor mixture comprising a constituent element...http://www.google.de/patents/US20050266662?utm_source=gb-gplus-sharePatent US20050266662 - Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
