A method for fabricating a semiconductor device having a multilevel interconnection structure according to the present invention includes the steps of: covering a surface of a substrate with an insulating film; depositing a conductive film on the insulating film; forming a first interlevel dielectric...http://www.google.de/patents/US6545361?utm_source=gb-gplus-sharePatent US6545361 - Semiconductor device having multilevel interconnection structure and method for fabricating the same
