A semiconductor device includes first and second p-type diffusion regions, and first and second n-type diffusion regions that are each electrically connected to a common node. Gate electrodes are formed from conductive features that are each defined within any one gate level channel that is uniquely...http://www.google.de/patents/US20100237430?utm_source=gb-gplus-sharePatent US20100237430 - Channelized Gate Level Cross-Coupled Transistor Device with Equal Width PMOS Transistors and Equal Width NMOS Transistors
